Kurze Beschreibung
Rapid Thermal Processing Tool for forming metal contacts on the semiconductor material SiC with ohmic behaviour
Manual handling; SiC wafer processing in SiC coated graphite boxes without wafer rotation, but also Si wafer processing without boxes with wafer rotation; applicable for wafer diameter: 100 mm, 150 mm, and 200 mm; low temperature measurement setup (500°C) and high temperature measurement setup (1 200°C); atmospheric chamber configuration; active chamber cooling; oxygen sensor for process chamber; Ar, N, O gas lines; including quarzware and SiC coated graphite boxes for different wafer diameters; full automatic process control; commissioning and training.