Beschreibung der Beschaffung
1 pc of 300 mm Wafer Electro Plating (ECD) Platform with options:
5.5.1 Hardware Compatibility Options
5.5.2 Precision Drive Head Upgrade Option
5.5.3 Pre-Aligner Upgrade Option
5.5.4 Dry Ring Upgrade Option
5.5.5 Spin Rinse Dry Chamber Upgrade Option
5.5.6 Further Chamber Upgrade Options
5.5.7 Indium Plating Process for Wafer Level Packaging Applications:
-5.2.10.1 General plating bath parameters
-5.2.10.2 POR plating bath (wider range is better; (Inorganics & concentrations (g/L, ppm); Additive package & concentrations (mL/L)
Plating Bath Temperature (°C): min, max, target; Electrolyte flow rate (L/min): min, max, target
-5.2.10.3 WLP feature fill capability
-5.2.10.4 Current set values
-5.2.10.5 Current density
-5.2.10.5 Plating steps
-5.2.10.6 Film Thickness and Uniformity (100% open area, edge exclusion: 5 mm)
-5.2.10.7 Sheet resistance (1000 nm Indium)
-5.2.10.8 Wafer rotation (rpm): POR target, min, max
-5.2.10.9 Paddle speed: POR target, min, max
-5.2.10.10 Purity of plated Indium films
-5.2.10.11 Film crystallinity Avg. grain size
-5.2.10.12 Film crystallinity Preferred texture)
-5.2.10.13 Film crystallinity Avg. Surface roughness (process of record)
-5.2.10.14 Total POR process time per wafer
5.6.1 Additive Dosing System
5.6.2 Electrolyte Degassing System
5.6.3 DI Prewet Degassing System